High power GaN monolithically integrated RF MEMS switches

Author

Mahmoud Mohamed, A.M. ; Boumaiza, Slim ; Mansour, Raafat R. ; Zine-El-Abidine, I.

Author_Institution

Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada

fYear

2013

fDate

6-10 Oct. 2013

Firstpage

1319

Lastpage

1322

Abstract

This paper outlines the design for a high power MEMS switch monolithically integrated on a CPFC MMIC GaN500 process. The switch was designed and optimized to facilitate integrated, reconfigurable, GaN HFET amplifiers. The measurement results for the switch show an insertion loss of less than 0.4 dB and isolation higher than 15 dB when used at frequencies of up to 10 GHz. During continuous wave measurements, the switches can handle high power (higher than 3.6W) under hot switching with a third order input intercept point of more than 68 dBm.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium compounds; high electron mobility transistors; microswitches; wide band gap semiconductors; CPFC MMIC; GaN; HFET amplifiers; frequency 10 GHz; high power monolithically integrated RF MEMS switches; hot switching; Gallium nitride; Micromechanical devices; Microwave amplifiers; Power amplifiers; Radio frequency; Switches; GaN-integrated MEMS; MEMS switches; integrated power amplifiers; monolithic tunable elements for power amplifiers; multi-standard multiband power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6686908