Title :
Impact of Auger recombination on hybrid green light-emitting diode
Author :
Verma, Shalini ; Mukherjee, Sayan
Author_Institution :
Hybrid Nanodevice Res. Group, Indian Inst. of Technol. Indore, Indore, India
Abstract :
The Auger recombination is considered to be one of the reasons for the origin of efficiency droop in InGaN-based light-emitting diodes (LEDs). We discuss, through numerical simulation, the impact of Auger recombination on internal quantum efficiency (IQE), luminous power and electroluminescence intensity of hybrid green light-emitting diode. The simulation results indicate that large values of Auger recombination coefficient decreases IQE greatly. Also, electron leakage is found to be a contributing factor towards efficiency droop at high injection current.
Keywords :
Auger effect; III-V semiconductors; electroluminescence; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; numerical analysis; wide band gap semiconductors; Auger recombination; IQE; InGaN; InGaN-based light-emitting diodes; LED; efficiency droop; electroluminescence intensity; electron leakage; hybrid green light emitting diode; internal quantum efficiency; luminous power; numerical simulation; Radiative recombination; Simulation; Auger recombination; efficiency droop; internal quantum efficiency; light-emitting diode;
Conference_Titel :
Photonics (ICP), 2013 IEEE 4th International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4673-6073-9
DOI :
10.1109/ICP.2013.6687066
