Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

Author

Fauzi, Dhiyauddin Ahmad ; Alang, Nahrul Khair ; Rashid, Md. Mamunur ; Omar, Nuurul Iffah Che ; Hasbullah, N.F. ; Zin, Muhammad Rawi Mohamed

Author_Institution

Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia

fYear

2013

fDate

28-30 Oct. 2013

Firstpage

227

Lastpage

229

Abstract

The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×l0¹⁶ neutron/cm². Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; leakage currents; neutron effects; quantum dot lasers; semiconductor diodes; semiconductor quantum dots; thermoelectricity; DWELL; GaAs; InAs; commercial diodes; current-voltage characteristics; electrical characteristics; forward bias leakage current; high neutron fluence effects; neutron-induced defects; quantum dot structures; reverse bias; series resistance; thermal neutron irradiation; Gallium arsenide; Indium gallium arsenide; DWELL structure; GaAs infrared emitting diodes; InAs quantum dots; Thermal neutron; displacement damage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2013 IEEE 4th International Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4673-6073-9

Type

conf

DOI

10.1109/ICP.2013.6687122

Filename

6687122