DocumentCode :
656255
Title :
Isolated quasi z-source bridgeless power factor correction with coupled inductor
Author :
Quang Trong Nha ; Huang-Jen Chiu ; Yu-Kang Lo ; Pham Phu Hieu ; Alam, Md Moktadir
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
7
Lastpage :
11
Abstract :
Existence of slow-recovery diodes on conduction paths of the isolated power factor correction converters causes conduction losses. This study proposes a new topology for PFC applications, namely isolated quasi z-source bridgeless PFC converter, to improve efficiency by eliminating of the low-recovery diodes on the conduction paths. The voltage spikes on MOSFETs caused by resonance between parasitic components are completely absorbed by using a non-dissipative clamping structure. As a result, low-voltage MOSFETs with low Rds(ON) are used to reduce the conduction loss. Moreover, couple-inductor is utilized to reduce the size of the boost-inductor. In this paper, a simulation circuit with 180-240 V input, 400 V/1 kW output was verified to demonstrate its feasibility. The simulation results shown the spikes on MOSFETs were absolutely eliminated. The input current was sinusoidal and in phase with the input voltage. The proposed topology is promising for high efficiency, high power factor, and low current total harmonic distortion applications.
Keywords :
DC-DC power convertors; MOSFET circuits; power factor correction; power inductors; power semiconductor diodes; conduction loss; coupled inductor; isolated power factor correction converter; low voltage MOSFET; nondissipative clamping structure; parasitic component; power 1 kW; quasi z-source bridgeless PFC converter; quasi z-source bridgeless power factor correction; slow recovery diode; total harmonic distortion; voltage 180 V to 240 V; voltage 400 V; Equations; Frequency control; MOSFET; Mathematical model; Switches; Virtual private networks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future Energy Electronics Conference (IFEEC), 2013 1st International
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-0071-8
Type :
conf
DOI :
10.1109/IFEEC.2013.6687470
Filename :
6687470
Link To Document :
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