A +32.8 dBm LDMOS power amplifier for WLAN in 65 nm CMOS technology

Author

Johansson, Torbjorn ; Bengtsson, Olof ; Lotfi, S. ; Vestling, Lars ; Norstrom, Hans ; Olsson, Jimmy ; Nystrom, Christian

Author_Institution

Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

53

Lastpage

56

Abstract

Generating high output power at radio frequencies in CMOS becomes more challenging as technology is scaled. Limitations mainly come from device design. We demonstrate the feasibility of an 10 V LDMOS device fabricated in 65 nm foundry CMOS technology with no added process steps or mask. DC, RF, and power characterization are presented which show the feasibility of the device. The LDMOS device is used in an integrated WLAN-PA design and 32.8 dBm linear output power in the 2.45 GHz band is achieved. Load-pull data also shows high output power capability at 5.8 GHz. The concept can also be used at 45 nm and 28 nm nodes in most foundry CMOS processes.

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; microwave integrated circuits; microwave power amplifiers; wireless LAN; DC characterization; LDMOS power amplifier; RF characterization; foundry CMOS technology; frequency 2.45 GHz; frequency 5.8 GHz; integrated WLAN-PA design; load-pull data; power characterization; radio frequencies; size 28 nm; size 45 nm; size 65 nm; CMOS integrated circuits; CMOS technology; Foundries; Gain; Logic gates; Power generation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687783