High power SiGe E-band transmitter for broadband communication

Author

Ben Yishay, Roee ; Katz, O. ; Carmon, R. ; Sheinman, B. ; Levinger, R. ; Mazor, N. ; Elad, Danny

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

73

Lastpage

76

Abstract

Fully integrated transmitter at E-band frequencies in a superhetrodyne architecture covering the 71-76GHz was designed and fabricated in 0.12μm SiGe technology. The transmitter´s front-end includes a power amplifier, image-reject driver, tunable RF attenuator, power detector and IF-to-RF up-converting mixer. A variable gain IF amplifier, quadrature baseband-to-IF modulator, frequency synthesizer and x4 frequency multiplier (quadrupler) are also integrated on-chip. It achieves output power at P1dB of 17.5 to 18.5 dBm, saturated power of 20.5 to 21.5 dBm, up to 39 dB Gain with an analog controlled dynamic range of 30 dB and consumes 1.75 W.

Keywords

Ge-Si alloys; frequency multipliers; frequency synthesizers; intermediate-frequency amplifiers; power amplifiers; radio transmitters; IF-to-RF up-converting mixer; SiGe; analog controlled dynamic range; broadband communication; frequency 71 GHz to 76 GHz; frequency multiplier; frequency synthesizer; high power SiGe E-band transmitter; image-reject driver; power 1.75 W; power amplifier; power detector; quadrature baseband-to-IF modulator; saturated power; size 0.12 micron; superhetrodyne architecture; tunable RF attenuator; variable gain IF amplifier; Power amplifiers; Power generation; Power harmonic filters; Radio frequency; Radio transmitters; Silicon germanium; Transmission line measurements; E-Band; Millimeter-wave Integrated Circuits; SiGe BiCMOS; Transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687788