DocumentCode
656581
Title
A high-efficiency PA with peak PAE of 32.9% and 12.7 dBm P1dB for 60 GHz beamforming applications in SiGe
Author
Glisic, Savo ; Elkhouly, Mohamed ; Meliani, Chafik
Author_Institution
Silicon Radar, Frankfurt Oder, Germany
fYear
2013
fDate
6-8 Oct. 2013
Firstpage
153
Lastpage
156
Abstract
A fully integrated differential power amplifier, produced in 130 nm SiGe process for 60 GHz application is presented. The PA features one-stage cascade topology with measured gain of 17.5 dB. The measured differential 1dB compression point (P1dB) at the output is 12.7 dBm, and the measured saturated power is 13.3 dBm. Power consumption at P1dB is 57.1 mW. The measured peak power-aided efficiency is 32.9%. To the best knowledge of authors, this is a record value for 60 GHz PAs in SiGe and CMOS.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; cascade networks; network topology; power amplifiers; CMOS; P1dB; PAE; SiGe; beamforming applications; biCMOS; differential 1dB compression point; frequency 60 GHz; fully integrated differential power amplifier; gain 17.5 dB; high-efficiency PA; one-stage cascade topology; power 57.1 mW; size 130 nm; CMOS integrated circuits; Gain; Power amplifiers; Power measurement; Silicon germanium; Temperature measurement; 60 GHz; Power amplifier (PA); Power-added efficiency (PAE); SiGe;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6687808
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