A 20W multi-band multi-mode MMIC power amplifier for base station applications

Author

Moronval, Xavier ; Dechansiaud, Adeline ; Abdoelgafoer, Reza

Author_Institution

NXP, Colomiers, France

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

161

Lastpage

164

Abstract

This paper presents the results obtained on a multiband multi-mode MMIC power amplifier. The proposed two-stage circuit is based on the silicon LDMOS technology. Thanks to dedicated design techniques, it can cover the DCS, PCS and UMTS bands (ranging from 1.805 to 2.17GHz) and delivers more than 20W of output power, 30 dB of gain and 50% of power added efficiency. The multi-mode capability is demonstrated thanks to the linearity (-43dBc ACPR at 7.5dB back-off) and video bandwidth (180MHz) performance. When combined in a Doherty configuration with an incremental 40W MMIC in a dual path package, the resulted asymmetric MMIC (an industry first) can deliver an unprecedented MMIC efficiency of up to 44% at 8dB back-off.

Keywords

3G mobile communication; MMIC power amplifiers; MOSFET; silicon; DCS; Doherty configuration; MMIC power amplifier; PCS; UMTS band; asymmetric MMIC; bandwidth 180 MHz; base station application; dual path package; frequency 1.805 GHz to 2.17 GHz; gain 30 dB; multiband multimode MMIC; power 20 W; power 40 W; power added efficiency; silicon LDMOS technology; video bandwidth; Gain; MMICs; Microwave amplifiers; Power amplifiers; Power generation; Wideband; Doherty; MMICs; base stations; power amplifiers; silicon; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687810