Individual source vias for GaN HEMT power bars

Author

Musser, M. ; van Raay, Friedbert ; Bruckner, P. ; Bronner, W. ; Quay, Ruediger ; Mikulla, Michael ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

184

Lastpage

187

Abstract

In this paper the layout concept based on individual source vias (ISV) is introduced and investigated for GaN HEMT power bar transistors. The influence of the source inductance on the gain parameters as well as on the stability is shown. The layout concept is described and small-signal measurements confirm the improvement of the gain as compared to a microstrip transmission line (MSL) concept. Measurements on packaged power bars show the benefit of ISV layouts both in terms of stability point and gain as well as P_out and PAE. Such measurements show PAE values of 70% in package and high gain values of 20.5 dB while delivering 106W of output power at 2 GHz.

Keywords

gallium compounds; high electron mobility transistors; microstrip lines; power transistors; stability; transmission lines; GaN; HEMT power bar transistors; ISV; MSL; individual source vias; layout concept; microstrip transmission line; small-signal measurements; stability; Frequency measurement; Gain; Inductance; Layout; Logic gates; Power measurement; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687816