Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K – 400K

This paper studies the gate and drain leakage currents of AlGaN/GaN high electron mobility transistors on SiC at subthreshold regime for the temperature range 300K - 400K. Positive and negative temperature dependences of the reverse gate current were identified depending on the gate-source bias. The second one might be related to traps located in AlGaN layer or to a virtual gate in the gate drain access region. This was investigated by DC and drain current transient measurements to identify trap effects and their signature.