DocumentCode
656667
Title
Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs
Author
Chang, Carole ; Di Giacomo-Brunel, Valeria ; Floriot, D. ; Grunenputt, J. ; Hosch, M. ; Blanck, H.
Author_Institution
United Monolithic Semicond. SAS, Villebon-sur-Yvette, France
fYear
2013
fDate
6-8 Oct. 2013
Firstpage
500
Lastpage
503
Abstract
Industrial microwave technologies presents specific modeling issues. Foundries have to provide design kits containing linear and nonlinear models which are multi-purpose, scalable and as accurate as possible. This can become quite challenging for technologies presenting complex nonlinear phenomena, such as GaN-based devices. Good trade-off among accuracy, numerical efficiency and generality can be anyway achieved, as shown in the paper.
Keywords
aluminium compounds; foundries; gallium compounds; high electron mobility transistors; microwave transistors; AlGaN-GaN; complex nonlinear phenomena; foundry; gallium nitride-based devices; industrial microwave technology; industrialHEMT; nonlinear transistor modeling; numerical efficiency; size 0.25 mum; Current measurement; Load modeling; Logic gates; Mathematical model; Numerical models; Temperature measurement; Transistors; GaN-Based Devices; Microwave Amplifier; Nonlinear Transistor Modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6687895
Link To Document