DocumentCode :
656676
Title :
A 159–169 GHz frequency source with 1.26 mW peak output power in 65 nm CMOS
Author :
Khamaisi, Bassam ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel-Aviv Univ., Tel-Aviv, Israel
fYear :
2013
fDate :
6-8 Oct. 2013
Firstpage :
536
Lastpage :
539
Abstract :
This paper present a D-band signal source based on a 2nd harmonic generation of a differential Colpitts VCO that fabricated on 65 nm CMOS process. It covers a frequency range from 159 GHz to 169 GHz with a total tuning range of 5.8%. It provides -3.8 dBm at 163.5 GHz with a nominal supply voltage of 1.2 V while consuming a DC current of 25 mA and with power efficiency of 1.38%; increasing the supply voltage to 2 V with consuming a DC current of 44 mA achieves +1 dBm at 164.6 GHz with efficiency of 1.43%. The source performance in terms of output power, tuning range and efficiency is the best that reported on CMOS at this frequency range.
Keywords :
CMOS integrated circuits; circuit tuning; harmonic generation; voltage-controlled oscillators; 2nd harmonic generation; CMOS process; D-band signal source; DC current; current 25 mA; current 44 mA; differential Colpitts VCO; efficiency 1.38 percent; frequency 159 GHz to 169 GHz; output power; power 1.26 mW; size 65 nm; tuning range; voltage 1.2 V; voltage 2 V; CMOS integrated circuits; Frequency measurement; Power generation; Transistors; Tuning; Voltage-controlled oscillators; CMOS; Colpitts topology; D-Band; Millimeter waves; Voltage Controlled Oscillator (VCO);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6687904
Link To Document :
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