POSFET tactile sensing chips using CMOS technology

Author

Dahiya, Ravinder S. ; Adami, Andrea ; Collini, Cristian ; Valle, M. ; Lorenzelli, Leandro

Author_Institution

Electron. & Nanoscale Eng. Res. Div., Univ. of Glasgow, Glasgow, UK

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

This work presents the advanced version of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. The tactile sensing chip in the new version, presented here, has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 × 4 POSFET touch sensing devices, four temperature diodes, and the electronic circuitry comprising of multiplexers, current mirrors, high compliance current sinks and voltage output buffers. The on chip POSFET devices have linear response in the tested dynamic contact forces range of 0.01-3N and the sensitivity (without amplification) is 102.4 mV/N.

Keywords

CMOS integrated circuits; buffer circuits; current mirrors; field effect transistors; multiplexing equipment; piezoelectric devices; piezoelectric semiconductors; tactile sensors; CMOS technology; complementary metal oxide semiconductor; current mirror; current sink; dynamic contact force; electronic circuit; linear response; multiplexer; on chip POSFET device; piezoelectric oxide semiconductor field effect transistor; tactile sensing chip; temperature diode; touch sensing device; voltage output buffer; Arrays; CMOS integrated circuits; Logic gates; Robot sensing systems; System-on-chip; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688149

Filename

6688149