Plasmonic and bolometric terahertz graphene sensors

Author

Shur, M. ; Muraviev, A.V. ; Rumyantsev, S.L. ; Knap, Wojciech ; Liu, Guo-Ping ; Balandin, A.A.

Author_Institution

ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

3

Abstract

We demonstrate that graphene field effect transistors can operate as both plasmonic and bolometric THz sensors depending on polarization and bias configurations. The plasmonic mechanism of detection is consistent with the overdamped plasma wave response. The bolometric regime is caused by the shift of the Dirac point with temperature and reveals the asymmetry in the electron and hole response associated with long-lived impurity centers responsible for the shift of the Dirac voltage.

Keywords

bolometers; field effect transistors; graphene; plasma devices; plasma waves; plasmonics; submillimetre wave transistors; terahertz wave detectors; C; Dirac voltage point; bias configuration; bolometric terahertz graphene sensor; electron asymmetry; graphene field effect transistor; hole response; long-lived impurity center; plasma wave detection response; plasmonic terahertz graphene sensor; polarization; Graphene; Logic gates; Plasma temperature; Plasmons; Sensors; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688554

Filename

6688554