UV-sensitive low dark-count PureB single-photon avalanche diode

Author

Lin Qi ; Mok, K.R.C. ; Charbon, E. ; Nanver, Lis K. ; Aminian, M. ; Charbon, E.

Author_Institution

Dept. of Microelectron., Delft Univ. of Technol., Delft, Netherlands

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

A single-photon avalanche diode (SPAD) with high responsivity in the ultraviolet (UV) wavelength range has been fabricated on Si using PureB (Pure Boron) chemical-vapor deposition to create both a nanometer-thin anode junction and robust light entrance window. The device shows high responsivity at the wavelength of 330 nm and 370 nm when operating in Geiger mode. The dark count rates (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm². An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill-factor.

Keywords

CVD coatings; avalanche photodiodes; boron; nanoelectronics; semiconductor doping; silicon; Geiger mode; PureB technology; SPAD; Si:B; UV sensitive avalanche diode; chemical vapor deposition; low dark count avalanche diode; n-enhancement implantation; nanometer thin anode junction; robust light entrance window; single photon avalanche diode; ultraviolet wavelength range; wavelength 330 nm; wavelength 370 nm; Anodes; Electric breakdown; Junctions; Photodiodes; Photonics; Semiconductor diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688603

Filename

6688603