4H-SiC Schottky contact improvement for temperature sensor applications

Author

Draghici, F. ; Badila, M. ; Brezeanu, G. ; Pristavu, G. ; Rusu, Irena ; Craciunoiu, F. ; Pascu, R.

Author_Institution

Politeh. Univ. of Bucharest, Bucharest, Romania

Volume

2

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

163

Lastpage

166

Abstract

An improvement in performance of 4H-SiC Schottky diodes using a Ni metal is proposed. The effects of the Schottky and ohmic contacts´ annealing process conditions are investigated through electrical characterization of the diodes. A thermal treatment at 800°C leads to devices with stable and reproducible electrical behavior. A high performance temperature sensor based on these 4H-SiC Schottky diode has been proved.

Keywords

Schottky diodes; annealing; heat treatment; ohmic contacts; silicon compounds; temperature sensors; wide band gap semiconductors; 4H-SiC Schottky contact improvement; 4H-SiC Schottky diodes; SiC; diode electrical characterization; electrical behavior; high-performance temperature sensor; nickel metal; ohmic contact annealing process condition; temperature 800 degC; thermal treatment; Annealing; Nickel; Schottky barriers; Schottky diodes; Silicon carbide; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688645

Filename

6688645