Title :
Investigation of the base resistance contributions in SiGe HBT devices
Author :
Stein, Fridtjof ; Celi, D. ; Maneux, Cristell ; Derrier, N. ; Chevalier, P.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The internal base resistance, that presents a crucial figure of merit and parameter for accurate RF device modelling is investigated. The reliability of a widely used approach for geometry scalable parameter extraction is analysed using measurement data of a state-of-the-art SiGeC HBT technology. The obtained results are used for numerical device simulations of the inner base as well as the base link region to verify the resistance values. Furthermore results from an alternative approach using measured S-parameter data from standard RF structures are compared by means of the semi-circle method.
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; RF device modelling; SiGeC; base link region; base resistance contribution; figure-of-merit; geometry scalable parameter extraction; internal base resistance; measured S-parameter data; numerical device simulations; resistance values; silicon germanium carbon HBT devices; standard RF structures; Current measurement; Electrical resistance measurement; Geometry; Heterojunction bipolar transistors; Radio frequency; Resistance; Silicon germanium;
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
DOI :
10.1109/SMICND.2013.6688685
