DocumentCode :
657468
Title :
Effect of a discrete PIN diode on Defected Ground Structure
Author :
Hadi, M. H. Abdul ; Ahmad, B.H. ; Shairi, N.A. ; Peng Wen Wong
Author_Institution :
Centre for Telecommun. Res. &Innovation, Univ. Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Malaysia
fYear :
2013
fDate :
22-25 Sept. 2013
Firstpage :
333
Lastpage :
337
Abstract :
This paper investigates the effect of a discrete PIN diode on Defected Ground Structure (DGS) where the different resonant frequency between ON and OFF state of the PIN diode is observed. Analytical modeling is determined and analyzed based on equivalent circuit of PIN diode and DGS. Then, a circuit simulation is performed using simulation software with different value of inductance and capacitance of DGS during ON and OFF state of the PIN diode. As a result, the resonant frequency of the PIN diode on the DGS shifted to higher frequency during ON state and shifted to lower frequency during OFF state. Besides, a larger value of inductance with a smaller value of capacitance of DGS will produce a larger range of resonant frequency between ON and OFF state and vice versa.
Keywords :
circuit simulation; defected ground structures; p-i-n diodes; analytical modeling; circuit simulation; defected ground structure; discrete PIN diode; equivalent circuit; resonant frequency; simulation software; Capacitance; Inductance; Microwave circuits; Microwave communication; PIN photodiodes; Resonant frequency; Switches; DGS; PIN diode; RF switch; defected ground structure; resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Technology and Applications (ISWTA), 2013 IEEE Symposium on
Conference_Location :
Kuching
ISSN :
2324-7843
Print_ISBN :
978-1-4799-0155-5
Type :
conf
DOI :
10.1109/ISWTA.2013.6688798
Filename :
6688798
Link To Document :
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