Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

Author

Sangheon Lee ; Daeseok Lee ; Jiyong Woo ; Euijun Cha ; Jaesung Park ; Jeonghwan Song ; Kibong Moon ; Yunmo Koo ; Attari, Behnoush ; Tamanna, Nusrat ; Haque, M.S. ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1515

Lastpage

1517

Abstract

The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (Vset), reset voltage (Vreset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.

Keywords

integrated circuit reliability; random-access storage; cross-point ReRAM; defect engineering; high-resistance state; highly-reliable resistive switching; initial forming operation; low-resistance state; metal-oxide layers; reset voltage; resistive random access memory; resistive switching uniformity; retention characteristics; set voltage; stack effect; switching reliability; Annealing; Hafnium compounds; Nonvolatile memory; Random access memory; Reliability engineering; Defect engineering; reliability; resistive switching; retention;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2284916

Filename

6646251