Structure optimization of through silicon via (TSV) interconnect as transmission channel for 3D integration

Through silicon via is the latest interconnect technology mainly targeted for 3-D integration. Though the technology is yet to be matured enough, but researchers from both academic and industries are putting their highest effort to make the best use of it. The different design parameter and structural geometry has a great effect on the performance of TSV. This paper is intended for modeling and optimization of different TSV geometry structure for higher performance based on 3D full wave simulation and circuit simulator. The TSV structures have been modeled and simulated using 3-D EM field simulator HFSS and circuit simulator ADS has been used to simulate the electrical circuit model of the structure. From the simulation result it is seen that the insertion loss varies minimum in cylindrical TSV. The simulation results also show that for same TSV parameters (height, diameter, and insulation gap) the cylindrical TSV performs better than that of other type of structure.