Title :
A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C
Author :
Pathrose, Jerrin ; Zou, L. ; Chai, Kevin T. C. ; Minkyu Je ; Yong Ping Xu
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
This paper presents a smart temperature sensor operating over a wide temperature range from 25°C-225°C. The proposed smart temperature sensor eliminates the explicit bandgap reference and only requires the ratio of two diode voltages to obtain ratiometric temperature measurements. The temperature sensor is implemented with a simple time-domain architecture, resulting in low power consumption and small chip area. Fabricated in a PDSOI CMOS process, the proposed smart temperature sensor achieves an accuracy of 2°C over 25°C-225°C and consumes only 25-μA current under a 4.5-V supply with a chip area of 0.45mm2.
Keywords :
CMOS integrated circuits; intelligent sensors; silicon-on-insulator; temperature measurement; temperature sensors; PDSOI CMOS process; current 25 muA; explicit bandgap reference; low power consumption; ratiometric temperature measurement; size 0.45 mm; small chip area; temperature 25 C to 225 C; time domain architecture; time domain smart temperature sensor; two diode voltage; voltage 4.5 V; CMOS integrated circuits; Calibration; Photonic band gap; Temperature distribution; Temperature measurement; Temperature sensors; Time-domain analysis; Bandgap Reference; High Temperature Electronics; Ratiometric Measurement; Smart temperature sensor;
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
DOI :
10.1109/ASSCC.2013.6691010