DocumentCode
658930
Title
A 10-bit 50-MS/s SAR ADC with techniques for relaxing the requirement on driving capability of reference voltage buffers
Author
Shao-Hua Wan ; Che-Hsun Kuo ; Soon-Jyh Chang ; Guan-Ying Huang ; Chun-Po Huang ; Goh Jih Ren ; Kai-Tzeng Chiou ; Cheng-Hsun Ho
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2013
fDate
11-13 Nov. 2013
Firstpage
293
Lastpage
296
Abstract
A high speed successive approximation (SAR) ADC requires reference voltage buffers with high driving capability. Moreover, the power consumption of the reference buffers is usually several times larger than that of the SAR ADC itself. Three techniques are adopted to mitigate the requirement on driving capability of reference voltage buffers for SAR ADCs. A 10b 50MS/s ADC based on the proposed techniques is presented. The prototype ADC was fabricated in 40nm LP 1P7M CMOS technology. It consumes 0.47 mW at 50 MS/s from 1.1V supply voltage and achieves ENOB of 9.18-bit and figure of merit (FoM) of 16 fJ/conversion-step. The active area is 0.0114 mm2.
Keywords
CMOS integrated circuits; analogue-digital conversion; buffer circuits; driver circuits; logic design; reference circuits; CMOS technology; SAR ADC; driving capability; high speed successive approximation; power 0.47 mW; power consumption; reference voltage buffers; size 40 nm; voltage 1.1 V; Approximation algorithms; Approximation methods; Arrays; CMOS integrated circuits; Capacitance; Capacitors; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location
Singapore
Print_ISBN
978-1-4799-0277-4
Type
conf
DOI
10.1109/ASSCC.2013.6691040
Filename
6691040
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