• DocumentCode
    658930
  • Title

    A 10-bit 50-MS/s SAR ADC with techniques for relaxing the requirement on driving capability of reference voltage buffers

  • Author

    Shao-Hua Wan ; Che-Hsun Kuo ; Soon-Jyh Chang ; Guan-Ying Huang ; Chun-Po Huang ; Goh Jih Ren ; Kai-Tzeng Chiou ; Cheng-Hsun Ho

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2013
  • fDate
    11-13 Nov. 2013
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    A high speed successive approximation (SAR) ADC requires reference voltage buffers with high driving capability. Moreover, the power consumption of the reference buffers is usually several times larger than that of the SAR ADC itself. Three techniques are adopted to mitigate the requirement on driving capability of reference voltage buffers for SAR ADCs. A 10b 50MS/s ADC based on the proposed techniques is presented. The prototype ADC was fabricated in 40nm LP 1P7M CMOS technology. It consumes 0.47 mW at 50 MS/s from 1.1V supply voltage and achieves ENOB of 9.18-bit and figure of merit (FoM) of 16 fJ/conversion-step. The active area is 0.0114 mm2.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; buffer circuits; driver circuits; logic design; reference circuits; CMOS technology; SAR ADC; driving capability; high speed successive approximation; power 0.47 mW; power consumption; reference voltage buffers; size 40 nm; voltage 1.1 V; Approximation algorithms; Approximation methods; Arrays; CMOS integrated circuits; Capacitance; Capacitors; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-0277-4
  • Type

    conf

  • DOI
    10.1109/ASSCC.2013.6691040
  • Filename
    6691040