• DocumentCode
    659013
  • Title

    ICCAD-2013 CAD contest in mask optimization and benchmark suite

  • Author

    Banerjee, Sean ; Zhuo Li ; Nassif, Sani R.

  • Author_Institution
    Semicond. R&D, IBM Res., East Fishkill, NY, USA
  • fYear
    2013
  • fDate
    18-21 Nov. 2013
  • Firstpage
    271
  • Lastpage
    274
  • Abstract
    Optical microlithography is the technique of printing a set of shapes on a wafer using light transmitted through a template called a mask. Repeatedly printing and stacking such shapes on top of each other to build electrical circuits allows us to manufacture chips in high volume. However this technique has now reached its fundamental physical limits of resolution. Current 193nm wavelength light is no longer sufficient to reliably transfer patterns which are now in the sub-100nm dimensional range. This has led to increased research in optimizing lithographic masks to pre-compensate for distortions introduced by the lithographic process. This is called mask optimization. In this contest, students are provided with a sample lithographic model which simulates the transfer of a mask pattern on to wafer. The mask is assumed to be a pixelated template, where every pixel can be turned on or off, to indicate where light passes through, or is blocked. Contestants are also provided with models to predict the robustness of their pattern i.e. how much variability is in the transferred pattern. Given these tools, the objective is to minimize the variability in the wafer image, as measured by process variability (PV) bands. This is subject to the constraints of runtime and satisfying pattern fidelity i.e. the transferred pattern should resemble the target pattern. Benchmarks are provided in the form of collections of geometric shapes, each of which provides a challenge in printing at sub-wavelength.
  • Keywords
    CAD; masks; ICCAD-2013 CAD contest; PV bands; benchmark suite; electrical circuits; lithographic mask optimization; mask pattern; optical microlithography; process variability bands; wavelength 193 nm; Benchmark testing; Layout; Optical imaging; Optimization; Resists; Semiconductor device modeling; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2013.6691131
  • Filename
    6691131