DocumentCode
65902
Title
Simulation Study of a 3-D Device Integrating FinFET and UTBFET
Author
Fahad, Hossain M. ; Chenming Hu ; Hussain, M.M.
Author_Institution
Div. of Comput., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Volume
62
Issue
1
fYear
2015
fDate
Jan. 2015
Firstpage
83
Lastpage
87
Abstract
By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
Keywords
MOSFET; silicon-on-insulator; 2D ultrathin bodies; 3D device simulation; 3D nonplanar fins; UTBFET; chip-area efficiency; enhanced transistor performance; silicon-on-insulator platform; trigate FinFETs; ultralarge-scale integration high-performance logic; wavy FinFETs; Educational institutions; FinFETs; Logic gates; Performance evaluation; Solid modeling; 2-D ultrathin bodies (UTBs); FinFET; ultralarge-scale integration; wavy; wavy.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2372695
Filename
6971130
Link To Document