A comparative analysis of FETToy simulation of CNTFET characteristics

Author

Sinha, Sujeet Kumar ; Chaudhury, Santanu

Author_Institution

Dept. of EE, NIT, Silchar, India

fYear

2013

fDate

13-14 Sept. 2013

Firstpage

62

Lastpage

64

Abstract

In this paper we analyse the effect of gate oxide thickness on various characteristics of CNTFET. Carbon nanotube based FET devices are more and more important today because of their improved gate capacitance. In nanometre regime quantum capacitance plays the major role for calculating the gate capacitance of a Device. After analysis of FETToy simulation, we found some favourable characteristics of gate capacitance which is decreasing, while reducing the oxide thickness and also observed larger drain current while reducing the oxide thickness, which is not possible to get in MOSFET.

Keywords

MOSFET; carbon nanotube field effect transistors; nanoelectronics; C; CNTFET characteristics; FETToy simulation; MOSFET; drain current; gate capacitance; gate oxide thickness; nanometre regime quantum capacitance; CNTFETs; Carbon nanotubes; Logic gates; MOSFET; Quantum capacitance; Threshold voltage; CNTFET; MOSFET; drain current; gate-oxide-thickness; quantum capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends and Applications in Computer Science (ICETACS), 2013 1st International Conference on

Conference_Location

Shillong

Print_ISBN

978-1-4673-5249-9

Type

conf

DOI

10.1109/ICETACS.2013.6691396

Filename

6691396