• DocumentCode
    66056
  • Title

    New Assessment Methodology Based on Energy–Delay–Yield Cooptimization for Nanoscale CMOS Technology

  • Author

    Xiaobo Jiang ; Junyao Wang ; Xingsheng Wang ; Runsheng Wang ; Binjie Cheng ; Asenov, Asen ; Lan Wei ; Ru Huang

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    1746
  • Lastpage
    1753
  • Abstract
    A new technology assessment methodology is proposed to simultaneously evaluate circuit-level energy, delay, and yield under realistic device operation theme through Monte Carlo analysis. Given any yield constraints, this new methodology can maximize the circuit energy efficiency without overdesign. It provides a method to quantify the tradeoff between energy-delay (ED) and yield. The proposed method is proved to be efficient especially for low power circuit applications compared with ED-only approach. Taking 14-nm FinFET design, for example, the impacts of major variation sources are analyzed for different circuit applications, showing a different trend from the ED-only approach. In addition, the methodology is also extended to include the impacts of reliability issues. A desired design strategy is found to balance the design merits and circuit reliability. The proposed methodology is helpful for technology assessment and early stage circuit design and planning.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; circuit optimisation; integrated circuit design; integrated circuit reliability; integrated circuit yield; low-power electronics; Monte Carlo analysis; circuit design; circuit energy efficiency; circuit reliability; energy-delay-yield cooptimization; low power circuit applications; nanoscale CMOS technology; CMOS integrated circuits; Circuit synthesis; Delays; FinFETs; Integrated circuit modeling; Optimization; Reliability; Delay; energy; optimization; reliability; variability; yield; yield.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2396575
  • Filename
    7042278