Title :
A novel 3D TSV transformer technology for digital isolator gate driver applications
Author :
Lulu Peng ; Rongxiang Wu ; Xiangming Fang ; Toyoda, Yoshiaki ; Akahane, Masashi ; Yamaji, Masaharu ; Sumida, Hitoshi ; Sin, Johnny K. O.
Author_Institution :
ECE Dept., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
In this paper, a novel 3D TSV (Through-Silicon-Via) transformer technology for power system-on-chip applications is proposed and demonstrated experimentally. The transformer used in the power system features a galvanic isolation of > 4 kV and a voltage gain of > -3 dB from 10 MHz to 100 MHz. It can be embedded in the bottom layer of a silicon substrate and sandwiched between system circuitries for ultimate area efficiency and the smallest possible form factor compared with other conventional on-silicon approaches. A digital isolator gate driver built using this transformer technology is achieved, and successful signal transfer is clearly illustrated.
Keywords :
driver circuits; power integrated circuits; system-on-chip; three-dimensional integrated circuits; transformers; 3D TSV transformer technology; digital isolator gate driver; galvanic isolation; power system-on-chip; silicon substrate; through silicon via transformer technology; Coils; Isolators; Logic gates; Power transformer insulation; Q-factor; Three-dimensional displays; Through-silicon vias; 3D integration; digital isolator; monolithic transformer; system-on-chip;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694399