Title :
Potential of diamond power devices
Author :
Yamasaki, S. ; Makino, T. ; Takeuchi, D. ; Ogura, M. ; Kato, H. ; Matsumoto, T. ; Iwasaki, T. ; Hatano, M. ; Suzuki, M. ; Koizumi, S. ; Ohashi, H. ; Okushi, H.
Author_Institution :
Energy Technol. Res. Inst., AIST, Tsukuba, Japan
Abstract :
For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.
Keywords :
diamond; power semiconductor devices; C; FOM; figure of merit; power semiconductor device; ultrahigh voltage application; Conductivity; Diamonds; Doping; Films; Plasma temperature; Switches; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694410
