Title :
MMICs and front end module design with selectively anodized aluminum substrate
Author :
Kichul Kim ; Kyoungmin Kim ; Songcheol Hong
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
Highly integrated front end module (FEM) with selectively anodized aluminum substrate was proposed and designed from 2.3 GHz to 2.5 GHz for WiMAX/Wibro applications. It consists of a MMIC power amplifier (PA), a MMIC SPDT switch, and a LPF with integrated passive device (IPD) on the substrate. The PA and the SPDT switch were designed with 2 μm GaAs HBT process and 0.5 μm InGaAs pHEMT process, respectively. The performance of the PA is comparable with commercial WiMAX products. The FEM has the gain of 30.3 dB and EVM of 2.6 % at 23 dBm FEM linear output power with the help of aluminum substrate´s good thermal dissipation, and its compact size is 4 × 5 mm2.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; microwave filters; microwave switches; Al; FEM; GaAs; GaAs HBT process; InGaAs; InGaAs pHEMT process; MMIC SPDT switch; MMIC power amplifier; WiMAX/Wibro applications; compact size; frequency 2.3 GHz to 2.5 GHz; front end module design; low-pass filter; power amplifier; selectively anodized aluminum substrate; size 0.5 mum; size 2 mum; thermal dissipation; Aluminum; Finite element analysis; MMICs; Power generation; Substrates; WiMAX; Front end module; MMIC; PA; SPDT switch; selectively anodized aluminum substrate;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694823
