Shielding cover effects on the RF performance of LDMOSFET power amplifier for WCDMA application

Author

Liang Lin ; Gang Cheng ; Wen-Yan Yin ; Liang Zhou

Author_Institution

Key Lab. of Minist. of Educ. of Design & EMC of High-Speed Electron. Syst., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

609

Lastpage

611

Abstract

Shielding cover effects on the RF performance of LDMOSFET power amplifier (PA) is investigated. In our measurement, the PA cover is made of aluminum, with its height adjusted from 8.4 to 14.4mm which are widely used in current wireless communication application. The input-output responses of several PA samples with cover are measured and compared for different cover heights. Both experiment and simulation show that as the cover height is reduced, the PA performance is degraded, but its power efficiency and linearity are not varied approximately. Further, it is found that, even the cover height is decreased, but through careful optimizing of its internal impedance matching networks consisting of multiple bonding wires, the PA performance can be improved effectively. This research can provide some useful design guidance for the development of compact and miniaturized PA module with high performance.

Keywords

MOSFET circuits; code division multiple access; impedance matching; power amplifiers; shielding; LDMOSFET power amplifier; RF performance; WCDMA application; impedance matching networks; multiple bonding wires; shielding cover effects; wireless communication; Bonding; Gain; Integrated circuit modeling; Loss measurement; Radio frequency; Resonant frequency; Wires; LDMOSFET; PA; bonding wires; cover; impedance match; inner resonance; shielding effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694880

Filename

6694880