Title :
A 147 GHz fully differential D-band amplifier design in 65 nm CMOS
Author :
Chun-Hsing Li ; Chih-Wei Lai ; Chien-Nan Kuo
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This work presents a 147 GHz D-band fully differential amplifier design in 65 nm CMOS. By using a T-network, composed of three inductors, to replace an on-chip transformer, the proposed impedance transformation network can provide an impedance transformation ratio larger than one. So the passive gain can be acquired to increase the amplifier gain. The measured results show that the amplifier can provide power gain of 7.1 dB at 147 GHz. The power consumption is 104 mW from a 2 V supply voltage.
Keywords :
CMOS analogue integrated circuits; differential amplifiers; impedance convertors; inductors; integrated circuit design; integrated circuit measurement; millimetre wave amplifiers; millimetre wave integrated circuits; CMOS technology; T-network; frequency 147 GHz; fully differential D-band amplifier design; gain 7.1 dB; impedance transformation network; inductor; on-chip transformer; passive gain acquisition; power 104 mW; size 65 nm; voltage 2 V; CMOS integrated circuits; CMOS technology; Gain; Impedance; Inductors; Resistance; Transistors; D-band; amplifier; differential; transformer;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694937
