135GHz CMOS small-signal amplifier with power-efficient bias method

Author

Motoyoshi, Mizuki ; Takano, Kyoya ; Katayama, Kengo ; Fujishima, Minoru

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

348

Lastpage

350

Abstract

A 135GHz CMOS wideband amplifier is proposed with high power efficiency to achieve a high-speed D-band wireless receiver. The proposed amplifier was fabricated with standard 1P12M 40nm CMOS technology. From measurement, the peak gain is 25dB with the power consumption was 140mW with a supply voltage of 1.1V. The amplifier achieved figure of merits of 25fJ. As a result, the performance characteristics required to realize a low-power front-end amplifier for a D-band wireless receiver were obtained.

Keywords

CMOS integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; transceivers; wideband amplifiers; D-band wireless receiver; bandwidth 135 GHz; gain 25 dB; high speed receiver; low power front end amplifier; power 140 mW; power efficient bias method; size 40 nm; small signal amplifier; standard 1P12M CMOS technology; voltage 1.1 V; wideband amplifier; Bandwidth; CMOS integrated circuits; Gain; Logic gates; Power demand; Tuning; Wireless communication; CMOS; D-band; high power efficiency; millimeter wave; small-signal amplifier; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6695142

Filename

6695142