Advances in graphene-based high-dynamic-range RF electronics

Author

Jeong-Sun Moon ; Gaskill, Kurt ; Asbeck, P.

Author_Institution

HRL Labs., Malibu, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

We present recent progress in graphene material, graphene FETs, heterostructures, graphene NEMS, and potentially disruptive RF applications of GFETs such as linear mixers and high dynamic range radiometers. Continuous development of emerging graphene would potentially improve existing RF systems with integration with standard Si/III-V RFICs similar to DARPA heterogeneous integration (DAHI) efforts, and enable a new generation of high performance 3D-RFICs.

Keywords

elemental semiconductors; field effect transistors; graphene; mixers (circuits); radiofrequency integrated circuits; radiometers; silicon; three-dimensional integrated circuits; 3D-RFIC; DARPA heterogeneous integration; RF systems; graphene FET; graphene NEMS; graphene material; graphene-based high-dynamic-range RF electronics; heterostructures; high dynamic range radiometers; linear mixers; Detectors; Field effect transistors; Graphene; Logic gates; Noise; Radio frequency; Voltage measurement; Graphene; NEMS; Transistors; detectors; heterostructures; linear mixers; mm-Wave; radiometers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697436

Filename

6697436