A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture

Author

Chia-Lin Hsieh ; Ming-Hang Wu ; Jen-Hao Cheng ; Jeng-Han Tsai ; Tian-Wei Huang

Author_Institution

Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

In this paper, a g_m-boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, g_m-boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.

Keywords

CMOS integrated circuits; low noise amplifiers; low-power electronics; CMOS process; LNA; forward body bias; g_m-boosted low-noise amplifier; gain 10.0 dB; gain-enhancement architecture; low-power operation; low-voltage architecture; microwatt dc power consumption; noise figure 4.8 dB; power 336 muW; size 0.18 mum; supply voltage; transformer-coupling; voltage 0.6 V; CMOS integrated circuits; Gain; Microwave amplifiers; Microwave circuits; Noise; Power demand; current-reused; forward-body-bias; low-noise amplifiers (LNAs); transformer-couple; ultra-low-power;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697468

Filename

6697468