Investigation of X-parameters modeling for accurate envelope tracking power amplifier system simulations

Author

Casini, G. ; Cidronali, Alessandro ; Manes, Gianfranco

Author_Institution

Dept. Inf. Eng., Univ. of Florence, Florence, Italy

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

This work reports the experimental evaluation of X-parameters models for the simulation of ET systems. We have extracted 2-port and 3-port X-parameters models from large signal vector measurements, for a GaAs PA with 40 dBm nominal peak power at 850 MHz. The data suggests that 3-port X-parameter model not only leads to an accuracy improvement during the estimation of average DE and ACLR but also permits the extraction of constant gain shaping functions that increase the overall system linearity.

Keywords

III-V semiconductors; UHF amplifiers; gallium arsenide; integrated circuit modelling; power amplifiers; 2-port X-parameters models; 3-port X-parameters models; ACLR; ET systems; GaAs PA; average DE estimation; constant gain shaping functions; envelope tracking power amplifier; frequency 850 MHz; large signal vector measurements; Accuracy; Data models; Gain; Integrated circuit modeling; Modulation; Power measurement; Vectors; Envelope Tracking PA; X-parameters; large signal vector measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697484

Filename

6697484