Measurement and modeling of carbon nanotubes-based flip-chip RF device

Author

Brun, C. ; Yap, C.C. ; Bila, S. ; Baillargeat, Dominique ; Tay, B.K.

Author_Institution

CINTRA, NTU/Thales, Singapore, Singapore

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

4

Abstract

A flip chip device based on carbon nanotubes (CNTs) interconnections characterized up to 40 GHz is presented. An analytical model using an RLC transmission line is fitted from measurements of the fabricated structure. CNTs have the potential to make smaller interconnections than metal-based ones with the same degree of performance. A value of 324 fcΩ is found for the contact resistance between CNTs. A CNT-bundle-based flip chip with -2.5 dB insertion loss and return loss below -13 dB is presented.

Keywords

carbon nanotubes; contact resistance; flip-chip devices; integrated circuit interconnections; semiconductor device measurement; semiconductor device models; CNT interconnections; CNT-bundle-based flip chip; RLC transmission line; carbon nanotubes-based flip-chip RF device measurement; carbon nanotubes-based flip-chip RF device modeling; contact resistance; fabricated structure; loss -13 dB; loss -2.5 dB; Carbon nanotubes; Contact resistance; Gold; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Resistance; CNT; Flip chip; Interconnections; Model; Transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697486

Filename

6697486