DocumentCode :
664550
Title :
High frequency noise characterisation of graphene FET device
Author :
Mele, D. ; Fregonese, Sebastien ; Lepilliet, Sylvie ; Pichonat, E. ; Dambrine, Gilles ; Happy, H.
fYear :
2013
fDate :
2-7 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET shows some potentialities for RF circuits with fT=11.5GHz and NFmin=2.4 dB at 3GHz.
Keywords :
alumina; graphene; low noise amplifiers; microwave field effect transistors; silicon compounds; wide band gap semiconductors; Al2O3; RF GFET device; RF circuit; SiC; SiC wafer; frequency 3 GHz; gate oxide; graphene FET device; graphene material; high frequency noise characterisation; high frequency noise measurement; Field effect transistors; Graphene; Logic gates; Noise; Noise measurement; Performance evaluation; Radio frequency; FET; LNA; circuit; graphene; high frequency noise; small signal model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
ISSN :
0149-645X
Print_ISBN :
978-1-4673-6177-4
Type :
conf
DOI :
10.1109/MWSYM.2013.6697561
Filename :
6697561
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=664550
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