Title :
A ring-HEMT for improved GaN MMIC thermal dissipation
Author :
Darwish, Ali M. ; Hung, Hingloi Alfred ; Ibrahim, Ahmed A.
Author_Institution :
American Univ. in Cairo, Cairo, Egypt
Abstract :
A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a regular HEMT, the new HEMT showed a decrease in junction temperature of 40°C from 178 °C resulting in a significant improvement in output power, and 43× fold increase in lifetime.
Keywords :
III-V semiconductors; MMIC; gallium compounds; high electron mobility transistors; microwave field effect transistors; thermal management (packaging); thermal resistance; wide band gap semiconductors; GaN; MMIC thermal dissipation; junction temperature; ring HEMT; ring like layout; temperature 40 C to 178 C; thermal effect; thermal resistance; Capacitance; Gallium nitride; HEMTs; Heating; Layout; Logic gates; Performance evaluation; FET; GaN HEMT; Junction Temperature; Reliability; Thermal Resistance;
Conference_Titel :
Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6177-4
DOI :
10.1109/MWSYM.2013.6697631
