A 40/85 GHz dual-band, bidirectional variable gain amplifier

Author

Kijsanayotin, Tissana ; Buckwalter, James F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

fYear

2013

fDate

2-7 June 2013

Firstpage

1

Lastpage

3

Abstract

A dual-band, bidirectional amplifier is proposed for millimeter-wave front-ends in CMOS silicon-on-insulator (SOI). The circuit is electronically controlled to amplify in either the forward or reverse direction at either 40 GHz (Q-band) or 81 GHz (W-band). The measured amplifier has a gain variation of 20 dB with a peak gain of 4.6 dB at both 40 GHz and 81 GHz. The circuit is fabricated in a 45-nm CMOS SOI process with an active area occupying only 0.17 mm² of die space.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; millimetre wave amplifiers; silicon-on-insulator; CMOS SOI process; CMOS silicon-on-insulator; dual-band bidirectional variable gain amplifier; electronically controlled circuit; frequency 40 GHz; frequency 85 GHz; gain 20 dB; millimeter-wave front-ends; size 45 nm; Dual band; Feedback amplifier; Feedback loop; Field effect transistors; Gain; Power transmission lines; Transmission line measurements; bidirectional; dual-band; millimeter-wave; silicon-on-insulator; traveling-wave amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International

Conference_Location

Seattle, WA

ISSN

0149-645X

Print_ISBN

978-1-4673-6177-4

Type

conf

DOI

10.1109/MWSYM.2013.6697680

Filename

6697680