A novel extraction procedure to determine the noise parameters of on-wafer devices

A new procedure for the extraction of noise parameters of on-wafer devices is presented and validated experimentally for the first time. The procedure is based on the noise figure measurement of similar devices of different size and biased at constant drain current density J_ds and constant drain voltage V_ds. Key to its implementation is a scalable noise model. The model in use is the Pospieszalski noise model, based on the equivalent noise temperatures T_gs and T_ds of the gate-source and the drain-source resistance, respectively. The new procedure also outlines a path towards the experimental validation of all the noise temperatures associated with the device´s lossy elements.