Title :
InGaAs/InP avalanche photodiode performance effect using variation guard ring structures
Author :
Taib, S.N. ; Othman, M.A. ; Napiah, Z.A.F.M. ; Hussain, Mutia Nurulhusna ; Yasin, N.Y.M. ; Arshad, T.S.M.
Author_Institution :
Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Malaysia
Abstract :
Avalanche Photodiode based on InGaAs/InP was chosen because of the needs of high-speed optical receivers and have their own advantages on high sensitivity. In this project, we focused on the effect of guard ring on InGaAs/InP avalanche photodiodes and its performance. Two types of guard ring structures are designed in APD and their current-voltage (I-V) characteristics (electric field profiles) are simulated and analysed. This paper investigates the effects of guard-ring (GR) structures on the performance of InGaAs/InP avalanche photodiodes (APDs). Two type InGaAs/InP-APDs based on P+/N-well guard ring and n+/p-substrate guard ring are designed and their electric field profiles are simulated and analyzed. Current current-voltage characteristics (I-V characteristics) are measured and compared.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; InGaAs-InP; P+/N-well guard ring; avalanche photodiode; current-voltage characteristics; electric field profiles; high-speed optical receivers; n+/p-substrate guard ring; variation guard ring structures; Anodes; Avalanche photodiodes; Breakdown voltage; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Structural rings; Avalanche photodiodes (APDs); I–V characteristics; InGaAs/InP; N-type; P-type; guard ring;
Conference_Titel :
Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2013 3rd International Conference on
Conference_Location :
Bandung
Print_ISBN :
978-1-4799-1649-8
DOI :
10.1109/ICICI-BME.2013.6698477
