Black box small-signal model of PMOS LDO voltage regulator

Author

Souvignet, Thomas ; Coulot, Thomas ; David, Yann ; Trochut, Severin ; Di Gilio, Thierry ; Allard, Bruno

Author_Institution

Embedded Power Manage. Team, STMicroelectron., Crolles, France

fYear

2013

fDate

10-13 Nov. 2013

Firstpage

495

Lastpage

500

Abstract

This paper presents a black box small-signal modeling of a low-dropout (LDO) voltage regulator. The small-signal model is derived for each part of the system around an operating point. Then, the closed-loop transfer-functions are obtained to build a five port network model of the LDO. The analytical solution is validated by simulation comparison with transistor-level implementation of a PMOS LDO in a 90nm CMOS process from STMicroelectronics. Due to the hand calculation difficulty, we proposed an automated extraction flow based on the QZ algorithm. The flow is verified with the model extraction of a complex PMOS LDO, designed in a 55nm STMicroelectronics CMOS process.

Keywords

CMOS integrated circuits; signal processing; transfer functions; voltage regulators; PMOS LDO voltage regulator; QZ algorithm; STMicroelectronics CMOS process; algorithm; automated extraction flow; black box small-signal model; closed-loop transfer-functions; extraction model; five port network model; low-dropout voltage regulator; size 55 nm; size 90 nm; transistor-level implementation; Impedance; Integrated circuit modeling; Mathematical model; Ports (Computers); Regulators; Semiconductor device modeling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE

Conference_Location

Vienna

ISSN

1553-572X

Type

conf

DOI

10.1109/IECON.2013.6699185

Filename

6699185