Title :
Comparison of the thermal properties of polycrystalline diamond and aluminium nitride substrates
Author :
Balakrishnan, Mahesh ; Sweet, M.R. ; Sankara Narayanan, E.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
In this paper, a numerical comparison of the thermal performance of silicon and silicon carbide power semiconductor dies mounted on diamond and aluminum nitride substrates is presented. Detailed three-dimensional GIGA simulations predict that a 26% reduction of thermal resistance can be achieved by replacing a silicon power device with a silicon carbide counterpart. Moreover, the thermal resistance can be reduced further by 71% through replacement of the aluminum nitride substrate with diamond. The reliability of the diamond and AlN substrates was further analyzed using stress tool in Ansys.
Keywords :
III-V semiconductors; aluminium compounds; diamond; power semiconductor devices; semiconductor device packaging; silicon compounds; thermal properties; thermal resistance; AlN; Ansys; aluminium nitride substrates; aluminum nitride substrates; polycrystalline diamond; silicon carbide power semiconductor dies; silicon power device; silicon power semiconductor dies; stress tool; thermal performance; thermal properties; thermal resistance; three-dimensional GIGA simulations; Conductivity; Diamonds; III-V semiconductor materials; Silicon; Silicon carbide; Substrates; Thermal resistance; Diamond substrate; Electronic packaging thermal management; Semiconductor device packaging; Thermal Resistivity; Thermal management of electronics;
Conference_Titel :
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location :
Vienna
DOI :
10.1109/IECON.2013.6699193
