Performance evaluation of normaly-off SiC JFET in matrix converter without antiparrallel diodes

Author

Safari, Saeed ; Castellazzi, Alberto ; Wheeler, Pat

Author_Institution

PEMC Group, Univ. of Nottingham, Nottingham, UK

fYear

2013

fDate

10-13 Nov. 2013

Firstpage

1815

Lastpage

1820

Abstract

This paper deals with reverse characteristics of normally-off SiC JFET and application of it in matrix converter. Forward and reverse conduction characteristics of SiC JFET are extracted and the demands for driving it are presented. Furthermore, it is employed in 2-phase to 1-phase matrix converter with and without antiparallel SiC diode. Then static and dynamic performances of it are investigated in different conditions to present the influence of eliminating the external diode. The results and methodology provide a useful and practical tool in a SiC power converter design.

Keywords

junction gate field effect transistors; matrix convertors; semiconductor diodes; silicon compounds; SiC; SiC power converter design; antiparallel SiC diode; antiparrallel diode; dynamic performance; forward conduction; matrix converter; normaly-off SiC JFET; reverse characteristic; reverse conduction; static performance; JFETs; Logic gates; Matrix converters; Silicon carbide; Switches; Switching frequency; Temperature measurement; SiC JFET; matrix converter; reverse conduction;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE

Conference_Location

Vienna

ISSN

1553-572X

Type

conf

DOI

10.1109/IECON.2013.6699407

Filename

6699407