Title :
Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules
Author :
Piasecki, Szymon ; Cantarellas, Antoni M. ; Rabkowski, Jacek ; Rodriguez, Paul
Author_Institution :
Inst. of Control & Ind. Electron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
This paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based on selection of the most convenient configuration, in terms of switching frequency and design of the line filter, in order to minimize the overall losses in the system. In this work two types of semiconductor devices are considered: silicon IGBT and silicon carbide MOSFET for the design of a 100 kVA system, and they performance is compared. The AC-DC converter parameters, the design methodology and preliminary simulation results for representatives of Si IGBT and SiC MOSFET modules are presented.
Keywords :
AC-DC power convertors; distributed power generation; insulated gate bipolar transistors; integrated circuit design; power MOSFET; power bipolar transistors; AC-DC power converter design; LCL + tuned trap line filter; apparent power 100 kVA; distributed generation systems; overall loss minimization; power generation applications; semiconductor devices; silicon IGBT modules; silicon carbide MOSFET modules; Harmonic analysis; Insulated gate bipolar transistors; MOSFET; Power harmonic filters; Silicon; Silicon carbide; Switching frequency; AC-DC Power Converter; Direct Power Control - Space Vector Modulated; Distributed Generation; IGBT Losses Analysis; LCL + Tunned Trap Line Filter; Line Filter Design; MOSFET Losses Analysis; Silicon Carbide;
Conference_Titel :
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location :
Vienna
DOI :
10.1109/IECON.2013.6700112
