• DocumentCode
    66677
  • Title

    Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

  • Author

    Beneventi, Giovanni Betti ; Gnani, Elena ; Gnudi, A. ; Reggiani, S. ; Baccarani, G.

  • Author_Institution
    Dept. of Electr., Electron. & Inf. Eng., Univ. of Bologna, Bologna, Italy
  • Volume
    62
  • Issue
    1
  • fYear
    2015
  • fDate
    Jan. 2015
  • Firstpage
    44
  • Lastpage
    51
  • Keywords
    MOSFET; energy gap; technology CAD (electronics); tunnel transistors; tunnelling; DMG TFET; DMG-TFET performance; TCAD simulations; device design options; dual-metal-gate tunnel FET; heavily-doped pocket; negative impact; quantization-induced bandgap widening; reduced tunneling probability; Doping; Junctions; Logic gates; Mathematical model; Performance evaluation; Photonic band gap; Tunneling; Band-to-band tunneling (BTBT); InAs; dual-metal gate (DMG); line TFET; pocket; quantization; steep subthreshold slope (SSS); tunnel FETs (TFETs); tunnel FETs (TFETs).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2371071
  • Filename
    6971197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=66677