• DocumentCode
    66688
  • Title

    Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance

  • Author

    Anders, Mark A. ; Lenahan, Patrick M. ; Cochrane, Corey J. ; Lelis, Aivars J.

  • Author_Institution
    Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    62
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    301
  • Lastpage
    308
  • Abstract
    In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz-350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.
  • Keywords
    MOSFET; interface states; interface structure; paramagnetic resonance; silicon compounds; wide band gap semiconductors; 4H-SiC-SiO2 interface structure; 4H-silicon carbide MOSFETs; EDMR measurements; SiC-SiO2; electrically detected magnetic resonance; electron paramagnetic resonance; electronic properties; frequency 16 GHz to 350 MHz; multiple interface-near interface defects; performance limiting imperfections; Annealing; Frequency measurement; MOSFET; Magnetic resonance; Silicon; Silicon carbide; 4H-silicon carbide (4H-SiC) MOSFET; defects; interface; magnetic resonance; magnetic resonance.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2364722
  • Filename
    6971198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=66688