DocumentCode
667644
Title
Self-formation processes in high-speed integrated circuits
Author
Navickas, R.
Author_Institution
Dept. of Comput. Eng., Vilnius Gediminas Tech. Univ., Vilnius, Lithuania
fYear
2013
fDate
11-12 Nov. 2013
Firstpage
1
Lastpage
8
Abstract
This paper presents the analysis of self-formation processes of micro and nanostructures in technologies of manufacturing high-speed semiconductor devices and integrated circuits (ICs) according possibilities to receive the minimal width of the base area and the methods used for the formation of contacts and electrodes. The results of the implementation of self-formation processes for creating new technologies of manufacturing semiconductor devices and ICs have been presented.
Keywords
electrical contacts; forming processes; high-speed integrated circuits; integrated circuit manufacture; semiconductor device manufacture; IC; contacts; electrodes; high-speed integrated circuit; high-speed semiconductor device manufacturing; integrated circui manufacturing; microstructure; nanostructure; self-formation process; Electrodes; Etching; Geometry; Lithography; Microstructure; Oxidation; Transistors; Self-formation processes; integrated circuits (ICs); non-lithography methods;
fLanguage
English
Publisher
ieee
Conference_Titel
NORCHIP, 2013
Conference_Location
Vilnius
Type
conf
DOI
10.1109/NORCHIP.2013.6701997
Filename
6701997
Link To Document