A simple all MOS voltage reference for RFID applications

Author

Chouhan, S.S. ; Halonen, Kari

Author_Institution

Dept. of Micro & Nano Sci., Aalto Univ., Aalto, Finland

fYear

2013

fDate

11-12 Nov. 2013

Firstpage

1

Lastpage

3

Abstract

In recent years Radio Frequency Identification (RFID) systems have become very popular in a number of applications. RFID is an example of mixed signal integrated circuit. Voltage reference is an important circuit for various modules like power generation unit, data converter units of RFID. The basic requirement of reference circuits is a simple architecture with low power consumption and high stability. In this work we are proposing the reference circuit in which output voltage is based on the difference between the gate-source voltages of two NMOS transistors. The proposed voltage reference circuit generates a simulated reference voltage of 610mV with a temperature coefficient of 10.5 ppm/°C for the temperature range of -40°C to 110°C. The maximum power consumption of the proposed circuit is 3μW simulated at a supply voltage of 2V. The line regulation is 0.25mV/V for the supply voltage range from 1.25V to 2V and the PSRR@100Hz is 69 to 75dB. The proposed circuit is implemented using a 180nm standard CMOS technology.

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; circuit stability; low-power electronics; mixed analogue-digital integrated circuits; modules; radiofrequency identification; radiofrequency integrated circuits; reference circuits; NMOS transistor; RFID application; data converter unit; frequency 100 Hz; gate-source voltage; mixed signal integrated circuit; noise figure 69 dB to 75 dB; power 3 muW; power consumption; power generation unit; radiofrequency identification system; simple all MOS voltage reference circuit; size 180 nm; stability; standard CMOS technology; temperature -40 degC to 110 degC; voltage 1.25 V to 2 V; voltage 610 mV; CMOS integrated circuits; CMOS technology; MOSFET; Power demand; Radiofrequency identification; Voltage control; RFID all-MOS implementation; low power; temperature dependence; voltage refer-ence;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2013

Conference_Location

Vilnius

Type

conf

DOI

10.1109/NORCHIP.2013.6702027

Filename

6702027