Experimental Determination of the Temperature Dependency of the Elastic Constants of Degenerately Doped Silicon

Author

Jaakkola, Anttoni ; Prunnila, Mika ; Pensala, Tuomas ; Dekker, James ; Pekko, Panu

Author_Institution

VTT Tech. Res. Centre of Finland, Espoo, Finland

fYear

2013

fDate

21-25 July 2013

Firstpage

421

Lastpage

424

Abstract

We study experimentally the temperature dependence of the elastic constants of degenerately doped silicon as a function of the doping level. First and second order thermal coefficients of the elastic constants are extracted from the temperature dependent resonance frequencies of a set of MEMS resonators fabricated on phosphorus, arsenic and boron doped wafers having maximum doping levels of 7.5 × 10¹⁹cm ^-3, 2.5 × 10¹⁹cm ^-3 and 3 × 10¹⁹cm ^-3, respectively. Trends in the behavior of the thermal coefficients as a function of doping are identified and discussed.

Keywords

doping profiles; elastic constants; elemental semiconductors; microfabrication; micromechanical resonators; silicon; MEMS resonators; Si; arsenic doped wafers; boron doped wafers; degenerately doped silicon; doping level; elastic constants; first order thermal coefficients; phosphorus doped wafers; second order thermal coefficients; temperature dependent resonance frequencies; Doping; Frequency measurement; Micromechanical devices; Resonant frequency; Silicon; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint

Conference_Location

Prague

Type

conf

DOI

10.1109/EFTF-IFC.2013.6702116

Filename

6702116